Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots.

Lin, T N; Inciong, M R; Santiago, S R M S; Yeh, T W; Yang, W Y; Yuan, C T; Shen, J L; Kuo, H C; Chiu, C H

Lin, T N; Inciong, M R; Santiago, S R M S; Yeh, T W; Yang, W Y; Yuan, C T; Shen, J L; Kuo, H C; Chiu, C H.

Afiliación

Lin TN; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Inciong MR; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Santiago SR; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Yeh TW; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Yang WY; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Yuan CT; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Shen JL; Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan.
Kuo HC; Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu, Taiwan.
Chiu CH; Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li, Taiwan.

Sci Rep ; 6: 23260, 2016 Mar 18.

Article en En | MEDLINE | ID: mdl-26987403

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article País de afiliación: Taiwán