Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction.

Han, Dong; Bang, Junhyeok; Xie, Weiyu; Meunier, Vincent; Zhang, ShengBai

Han, Dong; Bang, Junhyeok; Xie, Weiyu; Meunier, Vincent; Zhang, ShengBai.

Afiliación

Han D; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
Bang J; State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.
Xie W; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
Meunier V; Spin Engineering Physics Team, Korea Basic Science Institute (KBSI) , Daejeon 305-806, Republic of Korea.
Zhang S; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.

J Phys Chem Lett ; 7(18): 3548-53, 2016 Sep 15.

Article en En | MEDLINE | ID: mdl-27552528

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies / Risk_factors_studies Idioma: En Revista: J Phys Chem Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos

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