Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate.

Konishi, T; Clarke, E; Burrows, C W; Bomphrey, J J; Murray, R; Bell, G R

Konishi, T; Clarke, E; Burrows, C W; Bomphrey, J J; Murray, R; Bell, G R.

Afiliación

Konishi T; Centre for Collaborative Research, National Institute of Technology, Anan College, Anan, Tokushima, Japan.
Clarke E; EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom.
Burrows CW; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.
Bomphrey JJ; Department of Chemistry, University of Warwick, Coventry, CV4 7AL, United Kingdom.
Murray R; Department of Physics, Imperial College London, South Kensington Campus, London, SW7 2AZ, United Kingdom.
Bell GR; Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.

Sci Rep ; 7: 42606, 2017 02 13.

Article en En | MEDLINE | ID: mdl-28211899

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2017 Tipo del documento: Article País de afiliación: Japón