Controlling Growth High Uniformity Indium Selenide (In<sub>2</sub>Se<sub>3</sub>) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

Controlling Growth High Uniformity Indium Selenide (In₂Se₃) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen.

Afiliación

Hsu YC; Department of Material Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
Hung YC; Department of Material Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
Wang CY; Department of Material Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan. ChiuYWang@mail.ntust.edu.tw.

Nanoscale Res Lett ; 12(1): 532, 2017 Sep 15.

Article en En | MEDLINE | ID: mdl-28916974

Palabras clave

In situ annealing TEM; In2Se3; Nanowire; Rapid thermal annealing (RTA)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2017 Tipo del documento: Article País de afiliación: Taiwán

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