Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure.
Sci Rep
; 8(1): 5643, 2018 Apr 04.
Article
en En
| MEDLINE
| ID: mdl-29618743
ABSTRACT
The technology for electrical current passing through an insulator thin-film between two electrodes is newly getting spotlights for substantial potentials toward advanced functional devices including a diode and a resistive switching device. However, depending on an electrode-limited conduction mechanisms of the conventional devices, a narrow processing window for a thickness of the insulator thin-film and an inability to control a magnitude and direction of the currents are challenges to overcome. Herein, we report a new approach to enable electrical charge carriers to pass stably through a relatively-thick insulator layer and to control a magnitude and polarity of the currents by applying an oxide semiconductor electrode in a metal/insulator/metal structure. We reveal that the electrical conduction in our devices follows a space charge-limited conduction mechanism which mainly depends on the charge carriers injected from contacts. Therefore, characteristics of the current including a current value and a rectification ratio of input signal are precisely controlled by electrical properties of the oxide semiconductor electrode. The unique current characteristics in metal/insulator/oxide semiconductor structures give extendable inspirations in electronic materials science, even a prominent solution for various technology areas of electronics.
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01-internacional
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MEDLINE
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En
Revista:
Sci Rep
Año:
2018
Tipo del documento:
Article