Growth Mechanisms and Electronic Properties of Vertically Aligned MoS<sub>2</sub>.

Stern, Chen; Grinvald, Shmuel; Kirshner, Moshe; Sinai, Ofer; Oksman, Mark; Alon, Hadas; Meiron, Oren E; Bar-Sadan, Maya; Houben, Lothar; Naveh, Doron

Growth Mechanisms and Electronic Properties of Vertically Aligned MoS₂.

Stern, Chen; Grinvald, Shmuel; Kirshner, Moshe; Sinai, Ofer; Oksman, Mark; Alon, Hadas; Meiron, Oren E; Bar-Sadan, Maya; Houben, Lothar; Naveh, Doron.

Afiliación

Stern C; Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Grinvald S; Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Kirshner M; Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Sinai O; Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Oksman M; Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Alon H; Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Meiron OE; Department of Chemistry and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.
Bar-Sadan M; Department of Chemistry, Ben Gurion University, Beer-Sheva, Israel.
Houben L; Department of Chemistry, Ben Gurion University, Beer-Sheva, Israel.
Naveh D; Department of Chemical Research Support, Weizmann Institute of Science, Rehovot, Israel.

Sci Rep ; 8(1): 16480, 2018 Nov 07.

Article en En | MEDLINE | ID: mdl-30405157

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article País de afiliación: Israel