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Cyano-Substituted Head-to-Head Polythiophenes: Enabling High-Performance n-Type Organic Thin-Film Transistors.
Wang, Hang; Huang, Jun; Uddin, Mohammad Afsar; Liu, Bin; Chen, Peng; Shi, Shengbin; Tang, Yumin; Xing, Guichuan; Zhang, Shiming; Woo, Han Young; Guo, Han; Guo, Xugang.
Afiliación
  • Wang H; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University , 30 South Puzhu Road , Nanjing 211816 , Jiangsu , China.
  • Huang J; Department of Materials Science and Engineering, The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China.
  • Uddin MA; Department of Materials Science and Engineering, The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China.
  • Liu B; Center for Advanced Low-Dimension Materials, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials , Donghua University , Shanghai 201620 , China.
  • Chen P; Research Institute for Natural Sciences, Department of Chemistry , Korea University , Seoul 136-713 , South Korea.
  • Shi S; Department of Materials Science and Engineering, The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China.
  • Tang Y; Department of Materials Science and Engineering, The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China.
  • Xing G; Department of Materials Science and Engineering, The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China.
  • Zhang S; Department of Materials Science and Engineering, The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China.
  • Woo HY; Institute of Applied Physics and Materials Engineering , University of Macau , Macao 999078 , China.
  • Guo H; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University , 30 South Puzhu Road , Nanjing 211816 , Jiangsu , China.
  • Guo X; Research Institute for Natural Sciences, Department of Chemistry , Korea University , Seoul 136-713 , South Korea.
ACS Appl Mater Interfaces ; 11(10): 10089-10098, 2019 Mar 13.
Article en En | MEDLINE | ID: mdl-30777429
ABSTRACT
Polythiophenes, built on the electron-rich thiophene unit, typically possess high-lying energy levels of the lowest unoccupied molecular orbitals (LUMOs) and show hole-transporting properties. In this study, we develop a series of n-type polythiophenes, P1-P3, based on head-to-head-linked 3,3'-dialkoxy-4,4'-dicyano-2,2'-bithiophene (BTCNOR) with distinct side chains. The BTCNOR unit shows not only highly planar backbone conformation enabled by the intramolecular noncovalent sulfur-oxygen interaction but also significantly suppressed LUMO level attributed to the cyano-substitution. Hence, all BTCNOR-based polymer semiconductors exhibit low-lying LUMO levels, which are ∼1.0 eV lower than that of regioregular poly(3-hexylthiophene) (rr-P3HT), a benchmark p-type polymer semiconductor. Consequently, all of the three polymers can enable unipolar n-type transport characteristics in organic thin-film transistors (OTFTs) with low off-currents ( Ioffs) of 10-10-10-11 A and large current on/off ratios ( Ion/ Ioffs) at the level of 106. Among them, polymer P2 with a 2-ethylhexyl side chain offers the highest film ordering, leading to the best device performance with an excellent electron mobility (µe) of 0.31 cm2 V-1 s-1 in off-center spin-cast OTFTs. To the best of our knowledge, this is the first report of n-type polythiophenes with electron mobility comparable to the hole mobility of the benchmark p-type rr-P3HT and approaching the electron mobility of the most-studied n-type polymer, poly(naphthalene diimide- alt-bithiophene) (i.e., N2200). The change of charge carrier polarity from p-type (rr-P3HT) to n-type (P2) with comparable mobility demonstrates the obvious effectiveness of our structural modification. Adoption of n-hexadecyl (P1) and 2-butyloctyl (P3) side chains leads to reduced film ordering and results in 1-2 orders of magnitude lower µes, showing the critical role of side chains in optimizing device performance. This study demonstrates the unique structural features of head-to-head linkage containing BTCNOR for constructing high-performance n-type polymers, i.e., the alkoxy chain for backbone conformation locking and providing polymer solubility as well as the strong electron-withdrawing cyano group for lowering LUMO levels and enabling n-type performance. The design strategy of BTCNOR-based polymers provides useful guidelines for developing n-type polythiophenes.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article País de afiliación: China
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