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Quantitative Analysis of Weak Antilocalization Effect of Topological Surface States in Topological Insulator BiSbTeSe2.
Li, Hui; Wang, Huan-Wen; Li, Yang; Zhang, Huachen; Zhang, Shuai; Pan, Xing-Chen; Jia, Bin; Song, Fengqi; Wang, Jiannong.
Afiliación
  • Li H; Department of Physics , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong China.
  • Wang HW; Department of Physics , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong China.
  • Li Y; Department of Physics , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong China.
  • Zhang H; Department of Physics , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong China.
  • Zhang S; National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China.
  • Pan XC; Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China.
  • Jia B; National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China.
  • Song F; Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China.
  • Wang J; National Laboratory of Solid State Microstructures, School of Physics , Nanjing University , Nanjing 210093 , China.
Nano Lett ; 19(4): 2450-2455, 2019 04 10.
Article en En | MEDLINE | ID: mdl-30915851

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article
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