Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes.

Zheng, Yuxin; Zhang, Yonghui; Zhang, Ji; Sun, Ce; Chu, Chunshuang; Tian, Kangkai; Zhang, Zi-Hui; Bi, Wengang

Zheng, Yuxin; Zhang, Yonghui; Zhang, Ji; Sun, Ce; Chu, Chunshuang; Tian, Kangkai; Zhang, Zi-Hui; Bi, Wengang.

Afiliación

Zheng Y; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Zhang Y; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China. zhangyh@hebut.edu.cn.
Zhang J; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Sun C; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Chu C; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Tian K; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.
Zhang ZH; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China. zh.zhang@hebut.edu.cn.
Bi W; Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.

Nanoscale Res Lett ; 14(1): 149, 2019 May 02.

Article en En | MEDLINE | ID: mdl-31049737

Palabras clave

AlGaN; Finite-difference time-domain method; Light extraction efficiency; Ultraviolet light-emitting diode; p-type contact

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2019 Tipo del documento: Article