Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells.

Seo, Shem; Lim, Jinho; Lee, Sunghwan; Alimkhanuly, Batyrbek; Kadyrov, Arman; Jeon, Dasom; Lee, Seunghyun

Seo, Shem; Lim, Jinho; Lee, Sunghwan; Alimkhanuly, Batyrbek; Kadyrov, Arman; Jeon, Dasom; Lee, Seunghyun.

Afiliación

Seo S; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.
Lim J; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.
Lee S; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.
Alimkhanuly B; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.
Kadyrov A; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.
Jeon D; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.
Lee S; Semiconductor Device & Integration Laboratory, Department of Electronic Engineering , Kyunghee University , Yongin 17104 , Republic of Korea.

ACS Appl Mater Interfaces ; 11(46): 43466-43472, 2019 Nov 20.

Article en En | MEDLINE | ID: mdl-31658414

Palabras clave

2D materials; Cu-based chalcogenide; RRAM; nonvolatile memory; selector

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article

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