High-electron-mobility (370 cm<sup>2</sup>/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization.

Saito, M; Moto, K; Nishida, T; Suemasu, T; Toko, K

High-electron-mobility (370 cm²/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization.

Saito, M; Moto, K; Nishida, T; Suemasu, T; Toko, K.

Afiliación

Saito M; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.
Moto K; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.
Nishida T; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.
Suemasu T; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.
Toko K; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan. toko@bk.tsukuba.ac.jp.

Sci Rep ; 9(1): 16558, 2019 Nov 12.

Article en En | MEDLINE | ID: mdl-31719607

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2019 Tipo del documento: Article País de afiliación: Japón