Spin-Vibronic Model for Quantitative Prediction of Reverse Intersystem Crossing Rate in Thermally Activated Delayed Fluorescence Systems.

Kim, Inkoo; Jeon, Soon Ok; Jeong, Daun; Choi, Hyeonho; Son, Won-Joon; Kim, Dongwook; Rhee, Young Min; Lee, Hyo Sug

Kim, Inkoo; Jeon, Soon Ok; Jeong, Daun; Choi, Hyeonho; Son, Won-Joon; Kim, Dongwook; Rhee, Young Min; Lee, Hyo Sug.

Afiliación

Kim I; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics , Suwon 16678 , Republic of Korea.
Jeon SO; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics , Suwon 16678 , Republic of Korea.
Jeong D; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics , Suwon 16678 , Republic of Korea.
Choi H; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics , Suwon 16678 , Republic of Korea.
Son WJ; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics , Suwon 16678 , Republic of Korea.
Kim D; Department of Chemistry , Kyonggi University , Suwon 16227 , Republic of Korea.
Rhee YM; Department of Chemistry , Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141 , Republic of Korea.
Lee HS; Samsung Advanced Institute of Technology (SAIT), Samsung Electronics , Suwon 16678 , Republic of Korea.

J Chem Theory Comput ; 16(1): 621-632, 2020 Jan 14.

Article en En | MEDLINE | ID: mdl-31841330

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies / Risk_factors_studies Idioma: En Revista: J Chem Theory Comput Año: 2020 Tipo del documento: Article

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