Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.

Im, Ki-Sik; Reddy, Mallem Siva Pratap; Choi, Jinseok; Hwang, Youngmin; Roh, Jea-Seung; An, Sung Jin; Lee, Jung-Hee

Im, Ki-Sik; Reddy, Mallem Siva Pratap; Choi, Jinseok; Hwang, Youngmin; Roh, Jea-Seung; An, Sung Jin; Lee, Jung-Hee.

Afiliación

Im KS; Advanced Material Research Center and 2Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Korea.
Reddy MSP; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, Korea.
Hwang Y; Advanced Material Research Center and 2Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Korea.
Lee JH; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, Korea.

J Nanosci Nanotechnol ; 20(7): 4282-4286, 2020 Jul 01.

Article en En | MEDLINE | ID: mdl-31968458

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2020 Tipo del documento: Article