Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors.
J Nanosci Nanotechnol
; 20(7): 4450-4453, 2020 Jul 01.
Article
en En
| MEDLINE
| ID: mdl-31968494
ABSTRACT
We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.
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01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
J Nanosci Nanotechnol
Año:
2020
Tipo del documento:
Article
País de afiliación:
Corea del Sur