ThMnPnN (Pn = P, As): Synthesis, Structure, and Chemical Pressure Effects.

Zhang, Fuxiang; Li, Baizhuo; Ren, Qingyong; Mao, Huican; Xia, Yuanhua; Hu, Bingfeng; Liu, Zichen; Wang, Zhicheng; Shao, Yeting; Feng, Zhifa; Tan, Shugang; Sun, Yuping; Ren, Zhi; Jing, Qiang; Liu, Bo; Luo, Huiqian; Ma, Jie; Mei, Yuxue; Wang, Cao; Cao, Guang-Han

Zhang, Fuxiang; Li, Baizhuo; Ren, Qingyong; Mao, Huican; Xia, Yuanhua; Hu, Bingfeng; Liu, Zichen; Wang, Zhicheng; Shao, Yeting; Feng, Zhifa; Tan, Shugang; Sun, Yuping; Ren, Zhi; Jing, Qiang; Liu, Bo; Luo, Huiqian; Ma, Jie; Mei, Yuxue; Wang, Cao; Cao, Guang-Han.

Afiliación

Zhang F; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Li B; Department of Physics, Zhejiang University, Hangzhou 310027, P. R. China.
Ren Q; School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
Mao H; Department of Physics and Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, P. R. China.
Xia Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Hu B; Key Laboratory of Neutron Physics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621999, P. R. China.
Liu Z; Key Laboratory of Neutron Physics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621999, P. R. China.
Wang Z; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Shao Y; Department of Physics, Zhejiang University, Hangzhou 310027, P. R. China.
Feng Z; Department of Physics, Zhejiang University, Hangzhou 310027, P. R. China.
Tan S; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Sun Y; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Ren Z; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Jing Q; Institute for Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310027, P. R. China.
Liu B; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Luo H; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Ma J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Mei Y; School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
Wang C; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
Cao GH; School of Physics & Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.

Inorg Chem ; 59(5): 2937-2944, 2020 Mar 02.

Article en En | MEDLINE | ID: mdl-32064866

ABSTRACT

ABSTRACT

Mn-based ZrCuSiAs-type pnictides ThMnPnN (Pn = P, As) containing PbO-type Th2N2 layers were synthesized. The crystal and magnetic structures are determined using X-ray and neutron powder diffraction. While neutron diffraction indicates a C-type antiferromagnetic state at 300 K, the temperature dependence of the magnetic susceptibility shows cusps at 36 and 52 K respectively for ThMnPN and ThMnAsN. The susceptibility cusps are ascribed to a spontaneous antiferromagnetic-to-antiferromagnetic transition for Mn2+ moments, which is observed for the first time in Mn-based ZrCuSiAs-type compounds. In addition, measurements of the resistivity and specific heat suggest an abnormal increase in the density of states at the Fermi energy. The result is discussed in terms of the internal chemical pressure effect.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Inorg Chem Año: 2020 Tipo del documento: Article