Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealing.
Nanomaterials (Basel)
; 10(4)2020 Mar 31.
Article
en En
| MEDLINE
| ID: mdl-32244356
ABSTRACT
The nickel monogermanide (NiGe) phase is known for its electrical properties such as low ohmic and low contact resistance in group-IV-based electronics. In this work, thin films of nickel germanides (Ni-Ge) were formed by magnetron sputtering followed by flash lamp annealing (FLA). The formation of NiGe was investigated on three types of substrates on amorphous (a-Ge) as well as polycrystalline Ge (poly-Ge) and on monocrystalline (100)-Ge (c-Ge) wafers. Substrate and NiGe structure characterization was performed by Raman, TEM, and XRD analyses. Hall Effect and four-point-probe measurements were used to characterize the films electrically. NiGe layers were successfully formed on different Ge substrates using 3-ms FLA. Electrical as well as XRD and TEM measurements are revealing the formation of Ni-rich hexagonal and cubic phases at lower temperatures accompanied by the formation of the low-resistivity orthorhombic NiGe phase. At higher annealing temperatures, Ni-rich phases are transforming into NiGe, as long as the supply of Ge is ensured. NiGe layer formation on a-Ge is accompanied by metal-induced crystallization and its elevated electrical resistivity compared with that of poly-Ge and c-Ge substrates. Specific resistivities for 30 nm Ni on Ge were determined to be 13.5 µΩ·cm for poly-Ge, 14.6 µΩ·cm for c-Ge, and 20.1 µΩ·cm for a-Ge.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nanomaterials (Basel)
Año:
2020
Tipo del documento:
Article
País de afiliación:
Alemania