Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation.

Zou, Xianshao; Li, Chuanshuai; Su, Xiaojun; Liu, Yuchen; Finkelstein-Shapiro, Daniel; Zhang, Wei; Yartsev, Arkady

Zou, Xianshao; Li, Chuanshuai; Su, Xiaojun; Liu, Yuchen; Finkelstein-Shapiro, Daniel; Zhang, Wei; Yartsev, Arkady.

Afiliación

Zou X; School of Physics and Electronic Engineering, Guangzhou University, 510006 Guangzhou, China.
Li C; NanoLund and Division of Chemical Physics, Lund University, Box 124, 221 00 Lund, Sweden.
Su X; NanoLund and Division of Chemical Physics, Lund University, Box 124, 221 00 Lund, Sweden.
Liu Y; NanoLund and Division of Chemical Physics, Lund University, Box 124, 221 00 Lund, Sweden.
Finkelstein-Shapiro D; NanoLund and Division of Chemical Physics, Lund University, Box 124, 221 00 Lund, Sweden.
Zhang W; NanoLund and Division of Chemical Physics, Lund University, Box 124, 221 00 Lund, Sweden.
Yartsev A; School of Physics and Electronic Engineering, Guangzhou University, 510006 Guangzhou, China.

ACS Appl Mater Interfaces ; 12(25): 28360-28367, 2020 Jun 24.

Article en En | MEDLINE | ID: mdl-32469493

Palabras clave

GaAs; charge trapping; surface passivation; surface recombination velocity; time-resolved spectroscopy

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: China

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