40 Gbit/s waveguide photodiode using III-V on silicon heteroepitaxy.
Opt Lett
; 45(11): 2954-2956, 2020 Jun 01.
Article
en En
| MEDLINE
| ID: mdl-32479431
ABSTRACT
Low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) are demonstrated by direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates. The PDs have a dark current of 0.1 µA at -3V bias and an internal (external) responsivity of 0.78 A/W (0.27 A/W). The 3 dB bandwidth is 28 GHz, and open eye diagrams are detected at 40 Gbit/s.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Lett
Año:
2020
Tipo del documento:
Article