Initial oxidation of GaAs(100) under near-realistic environments revealed by in situ AP-XPS.
Chem Commun (Camb)
; 56(94): 14905-14908, 2020 Nov 26.
Article
en En
| MEDLINE
| ID: mdl-33179651
In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Chem Commun (Camb)
Asunto de la revista:
QUIMICA
Año:
2020
Tipo del documento:
Article
País de afiliación:
Japón