High Current Density in Monolayer MoS2 Doped by AlOx.

McClellan, Connor J; Yalon, Eilam; Smithe, Kirby K H; Suryavanshi, Saurabh V; Pop, Eric

High Current Density in Monolayer MoS₂ Doped by AlO_x.

McClellan, Connor J; Yalon, Eilam; Smithe, Kirby K H; Suryavanshi, Saurabh V; Pop, Eric.

Afiliación

McClellan CJ; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Yalon E; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Smithe KKH; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Suryavanshi SV; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Pop E; Electrical Engineering, Stanford University, Stanford, California 94305, United States.

ACS Nano ; 15(1): 1587-1596, 2021 Jan 26.

Article en En | MEDLINE | ID: mdl-33405894

Palabras clave

2D semiconductors; Al2O3; MoS2; current density; doping; high-field; self-heating

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos

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