Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction.

Galbiati, Miriam; Persichetti, Luca; Gori, Paola; Pulci, Olivia; Bianchi, Marco; Di Gaspare, Luciana; Tersoff, Jerry; Coletti, Camilla; Hofmann, Philip; De Seta, Monica; Camilli, Luca

Galbiati, Miriam; Persichetti, Luca; Gori, Paola; Pulci, Olivia; Bianchi, Marco; Di Gaspare, Luciana; Tersoff, Jerry; Coletti, Camilla; Hofmann, Philip; De Seta, Monica; Camilli, Luca.

Afiliación

Galbiati M; Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
Persichetti L; Department of Sciences, Roma Tre University, 00146 Rome, Italy.
Gori P; Department of Engineering, Roma Tre University, 00146 Rome, Italy.
Pulci O; Department of Physics, University of Rome "Tor Vergata", 00133 Rome, Italy.
Bianchi M; Istituto Nazionale di Fisica Nucleare, Roma 2, 00133 Rome, Italy.
Di Gaspare L; Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark.
Tersoff J; Department of Sciences, Roma Tre University, 00146 Rome, Italy.
Coletti C; IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, New York 10598, United States.
Hofmann P; Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa 56127, Italy.
De Seta M; Graphene Laboratories, Istituto Italiano di Tecnologia, Genova 16163, Italy.
Camilli L; Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark.

J Phys Chem Lett ; 12(4): 1262-1267, 2021 Feb 04.

Article en En | MEDLINE | ID: mdl-33497236

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2021 Tipo del documento: Article País de afiliación: Dinamarca

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