High-kerbium oxide film prepared by sol-gel method for low-voltage thin-film transistor.

ABSTRACT

In this work, high-dielectric-constant (high-k) erbium oxide（Er2O3）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er2O3nanofilm is investigated. To demonstrate the applicability of the Er2O3film, the indium oxide (In2O3) thin film transistor (TFT)-based amorphous Er2O3dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er2O3nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.