Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals.
Nano Lett
; 21(5): 2026-2032, 2021 Mar 10.
Article
en En
| MEDLINE
| ID: mdl-33606545
ABSTRACT
Topological materials that possess spin-momentum locked surface states provide an ideal platform to manipulate the quantum spin states by electrical means. However, an antisymmetric magnetoresistance (MR) superimposed on the spin-polarized transport signals is usually observed in the spin potentiometric measurements of topological materials, rendering more power loss and reduced signal-to-noise ratio. Here we reveal the mechanism of surface-bulk interaction for the observed antisymmetric linear MR in the spin transport of Dirac semimetal Cd3As2 nanoplates. The antisymmetric linear MR can be eliminated through sample surface modifications. As a consequence, clean signals of charge current induced spin-polarized transport are observed, robust up to room temperature. The purification of spin signals can be attributed to the isolation of surface and bulk transport channels via forming a charge depletion layer with surface modifications. This surface engineering strategy should be valuable for high-performance spintronic devices on topological materials.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2021
Tipo del documento:
Article
País de afiliación:
China