Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring.
Opt Express
; 30(2): 1808-1817, 2022 Jan 17.
Article
en En
| MEDLINE
| ID: mdl-35209335
ABSTRACT
Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3-16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M-LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M-LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2022
Tipo del documento:
Article