UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes.

Chen, Shanshan; Zhan, Tengrun; Pan, Xinhua; He, Haiping; Huang, Jingyun; Lu, Bin; Ye, Zhizhen

Chen, Shanshan; Zhan, Tengrun; Pan, Xinhua; He, Haiping; Huang, Jingyun; Lu, Bin; Ye, Zhizhen.

Afiliación

Chen S; School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 People's Republic of China.
Zhan T; Guangdong Provincial Key Laboratory of Information Photonics Technology Guangzhou 510006 People's Republic of China.
Pan X; State Key Laboratory of Silicon Materials, Zhejiang University Hangzhou 310027 People's Republic of China panxinhua@zju.edu.cn.
He H; School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 People's Republic of China.
Huang J; State Key Laboratory of Silicon Materials, Zhejiang University Hangzhou 310027 People's Republic of China panxinhua@zju.edu.cn.
Lu B; School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University Hangzhou 310027 People's Republic of China.
Ye Z; Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University Wenzhou 325006 P. R. China.

RSC Adv ; 11(62): 38949-38955, 2021 Dec 06.

Article en En | MEDLINE | ID: mdl-35492489

RESUMEN

5-period ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2021 Tipo del documento: Article