Reversible Insulator-Metal Transition by Chemical Doping and Dedoping of a Mott Insulator.

Teruya, Ryota; Sato, Tetsu; Yamashita, Masahiro; Hanasaki, Noriaki; Ueda, Akira; Matsuda, Masaki

Teruya, Ryota; Sato, Tetsu; Yamashita, Masahiro; Hanasaki, Noriaki; Ueda, Akira; Matsuda, Masaki.

Afiliación

Teruya R; Department of Chemistry, Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan.
Sato T; Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aramaki-Aza-Aoba, Aoba-ku, Sendai, 980-8578, Japan.
Yamashita M; Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aramaki-Aza-Aoba, Aoba-ku, Sendai, 980-8578, Japan.
Hanasaki N; Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka, 560-0043, Japan.
Ueda A; Department of Chemistry, Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan.
Matsuda M; Department of Chemistry, Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan.

Angew Chem Int Ed Engl ; 61(34): e202206428, 2022 Aug 22.

Article en En | MEDLINE | ID: mdl-35676224

Palabras clave

Carrier Doping; Insulator-Metal Transition; Mott Insulator; Mott Transition; Strongly Correlated Material

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Año: 2022 Tipo del documento: Article País de afiliación: Japón

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