Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation.

Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS2 by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS2 is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redshift in peaks are observed from the fluorescent spectra of Er-doped WS2 monolayers compared with their counterparts of the pristine WS2 monolayers, which agrees well with the density functional theory calculations. In addition, over 11 times of dark current, 469 times of photocurrents, photoresponsivity, and external quantum efficiency, and two orders of photoresponse speed are demonstrated from the Er-doped WS2 photodetector compared with those of the pristine WS2 device. Our findings prove rare-earth doping in 2D materials, the exciting and ideal technique for substantially enhanced photoluminescent and photoresponsive properties.