Enhanced Photoluminescence of 1.3 µm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission.

Kim, Yeonhwa; Chu, Rafael Jumar; Ryu, Geunhwan; Woo, Seungwan; Lung, Quang Nhat Dang; Ahn, Dae-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan

Kim, Yeonhwa; Chu, Rafael Jumar; Ryu, Geunhwan; Woo, Seungwan; Lung, Quang Nhat Dang; Ahn, Dae-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan.

Afiliación

Kim Y; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Chu RJ; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea.
Ryu G; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Woo S; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea.
Lung QND; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Ahn DH; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Han JH; Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea.
Choi WJ; Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Jung D; Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea.

ACS Appl Mater Interfaces ; 14(39): 45051-45058, 2022 Oct 05.

Article en En | MEDLINE | ID: mdl-36162121

Palabras clave

defect; electroluminescence; epitaxy; photoluminescence; quantum dot; silicon photonics

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: Corea del Sur

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