Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe<sub>2</sub> Lateral Heterostructure.

Zhang, Huimin; Yan, Chenhui; Ge, Zhuozhi; Weinert, Michael; Li, Lian

Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe₂ Lateral Heterostructure.

Zhang, Huimin; Yan, Chenhui; Ge, Zhuozhi; Weinert, Michael; Li, Lian.

Afiliación

Zhang H; Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States.
Yan C; State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China.
Ge Z; Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States.
Weinert M; Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States.
Li L; Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53201, United States.

J Phys Chem Lett ; 13(46): 10713-10721, 2022 Nov 24.

Article en En | MEDLINE | ID: mdl-36367815

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos

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