Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist.

Kim, Jiho; Lee, Jin-Kyun; Chae, Boknam; Ahn, Jinho; Lee, Sangsul

Kim, Jiho; Lee, Jin-Kyun; Chae, Boknam; Ahn, Jinho; Lee, Sangsul.

Afiliación

Kim J; Pohang Accelerator Laboratory, POSTECH, Pohang, 37673, Republic of Korea.
Lee JK; Department of Polymer Science and Engineering, Inha University, Incheon, 22212, Republic of Korea.
Chae B; Pohang Accelerator Laboratory, POSTECH, Pohang, 37673, Republic of Korea.
Ahn J; Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea. jhahn@hanyang.ac.kr.
Lee S; Pohang Accelerator Laboratory, POSTECH, Pohang, 37673, Republic of Korea. sangsul@postech.ac.kr.

Nano Converg ; 9(1): 53, 2022 Dec 02.

Article en En | MEDLINE | ID: mdl-36459274

Palabras clave

Hydrogen silsesquioxane (HSQ); Infrared nanoscopy; Nanoscale chemical visualization; Photoreaction; Photoresist; Photoresist metrology; Scattering-type scanning near-field optical microscope (s-SNOM)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Converg Año: 2022 Tipo del documento: Article