Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS<sub>2</sub> heterojunction: a first-principles study.

Sorkin, Viacheslav; Zhou, Hangbo; Yu, Zhi Gen; Ang, Kah-Wee; Zhang, Yong-Wei

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS₂ heterojunction: a first-principles study.

Sorkin, Viacheslav; Zhou, Hangbo; Yu, Zhi Gen; Ang, Kah-Wee; Zhang, Yong-Wei.

Afiliación

Sorkin V; Institute of High-Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore. sorkinv@ihpc.a-star.edu.sg.
Zhou H; Institute of High-Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore.
Yu ZG; Institute of High-Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore.
Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. kahwee.ang@nus.edu.sg.
Zhang YW; Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore, 138634, Singapore. kahwee.ang@nus.edu.sg.

Sci Rep ; 12(1): 21086, 2022 Dec 06.

Article en En | MEDLINE | ID: mdl-36473911

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article País de afiliación: Singapur