Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate.

Ahn, Min-Joo; Jeong, Woo-Seop; Shim, Kyu-Yeon; Kang, Seongho; Kim, Hwayoung; Kim, Dae-Sik; Jhin, Junggeun; Kim, Jaekyun; Byun, Dongjin

Ahn, Min-Joo; Jeong, Woo-Seop; Shim, Kyu-Yeon; Kang, Seongho; Kim, Hwayoung; Kim, Dae-Sik; Jhin, Junggeun; Kim, Jaekyun; Byun, Dongjin.

Afiliación

Ahn MJ; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Jeong WS; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Shim KY; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Kang S; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Kim H; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Kim DS; Natural Science Research, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
Jhin J; Advanced View Technology Inc., Ansan 15588, Republic of Korea.
Kim J; Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea.
Byun D; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Materials (Basel) ; 16(6)2023 Mar 20.

Article en En | MEDLINE | ID: mdl-36984342

Palabras clave

AlN; GaN; SAG; aluminum nitride; epitaxial growth; gallium nitride; pulsed MOCVD; selective-area growth

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2023 Tipo del documento: Article