Current crowding in graphene-silicon schottky diodes.

Anwar, Muhammad Abid; Ali, Munir; Bodepudi, Srikrishna Chanakya; Malik, Muhammad; Pu, Dong; Zhu, Xinyu; Pan, Xin; Shehzad, Khurram; Imran, Ali; Zhao, Yuda; Dong, Shurong; Hu, Huan; Yu, Bin; Xu, Yang

Anwar, Muhammad Abid; Ali, Munir; Bodepudi, Srikrishna Chanakya; Malik, Muhammad; Pu, Dong; Zhu, Xinyu; Pan, Xin; Shehzad, Khurram; Imran, Ali; Zhao, Yuda; Dong, Shurong; Hu, Huan; Yu, Bin; Xu, Yang.

Afiliación

Anwar MA; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Ali M; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Bodepudi SC; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Malik M; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Pu D; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Zhu X; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Pan X; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Shehzad K; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Imran A; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Zhao Y; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Dong S; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Hu H; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Yu B; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Xu Y; School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China.

Nanotechnology ; 34(29)2023 May 09.

Article en En | MEDLINE | ID: mdl-37075709

Palabras clave

2D materials; breakdown voltage (VBD); electrostatic discharge (ESD); graphene/silicon (Gr/Si) heterostructure; transmission line pulse (TLP)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2023 Tipo del documento: Article