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Intrinsic piezoelectricity of 2D violet phosphorene.
Yang, Dingyi; Xu, Wei; Wang, Boyu; Zhang, Yu; Wang, Yongmei; Ning, Jing; Yang, Rusen; Wu, Yizhang; Zhong, Wei; Wang, Yong; Hao, Yue.
Afiliación
  • Yang D; Academy of Advanced Interdisciplinary Research, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China. yongwang@xidian.edu.cn.
  • Xu W; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China.
  • Wang B; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China. ningj@xidian.edu.cn.
  • Zhang Y; Department of Physics, Shaanxi University of Science and Technology, Xi'an 710021, China.
  • Wang Y; Academy of Advanced Interdisciplinary Research, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China. yongwang@xidian.edu.cn.
  • Ning J; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China. ningj@xidian.edu.cn.
  • Yang R; Academy of Advanced Interdisciplinary Research, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China. yongwang@xidian.edu.cn.
  • Wu Y; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China.
  • Zhong W; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China.
  • Wang Y; Academy of Advanced Interdisciplinary Research, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China. yongwang@xidian.edu.cn.
  • Hao Y; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China. ningj@xidian.edu.cn.
Nanoscale ; 15(21): 9496-9502, 2023 Jun 01.
Article en En | MEDLINE | ID: mdl-37166342
ABSTRACT
Violet phosphorene (VP) has an extensive range of potential uses in piezoelectric gadgets due to its excellent electron transport capabilities. Nevertheless, VP materials are devoid of the piezoelectric effect because of the absence of ionic polarity. In this study, the piezoelectric capacity of the VP nano-sheet was investigated. According to the findings, the VP exhibited precise in-plane and out-of-plane piezoelectricity. For both in-plane as well as out-of-plane applications, the monolayer of VP had a characteristic direct piezoelectric reaction, and piezoelectric hysteresis loops were established at an electric field excitation of -18 V to +18 V. According to calculations using the density functional theory, VP has inside inherent dipoles. Outcomes from piezoelectric force microscopy, in particular, for VP with a thickness of 17.6 nm revealed that d33 is up to 12.65 pm V-1 and d31 is up to 1.03 pm V-1. The thickness-relied piezoelectric results demonstrated that VP's piezoelectric capabilities degraded as width increased.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: China
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