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Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films.
Guo, Xiangyu; Han, Qi; Wang, Jun; Tian, Shuangshuang; Bai, Rongxu; Zhao, Haibin; Zou, Xingli; Lu, Xionggang; Sun, Qingqing; Zhang, David W; Hu, Shen; Ji, Li.
Afiliación
  • Guo X; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Han Q; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Wang J; Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China.
  • Tian S; Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China.
  • Bai R; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zhao H; Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China.
  • Zou X; State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
  • Lu X; State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
  • Sun Q; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Hu S; Hubei Yangtz Memory Laboratories, Wuhan 430205, China.
  • Ji L; School of Microelectronics, Fudan University, Shanghai 200433, China.
ACS Appl Mater Interfaces ; 15(20): 24606-24613, 2023 May 24.
Article en En | MEDLINE | ID: mdl-37184060
We report the large-scale transfer process for monocrystalline CsPbBr3 thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr3 thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr3 and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 µJ/cm2, a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm2 V-1 s-1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr3 and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.
Palabras clave

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: China
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