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Fe-Intercalation Dominated Ferromagnetism of van der Waals Fe3 GeTe2.
Wu, Yueshen; Hu, Yuxiong; Wang, Cong; Zhou, Xiang; Hou, Xiaofei; Xia, Wei; Zhang, Yiwen; Wang, Jinghui; Ding, Yifan; He, Jiadian; Dong, Peng; Bao, Song; Wen, Jinsheng; Guo, Yanfeng; Watanabe, Kenji; Taniguchi, Takashi; Ji, Wei; Wang, Zhu-Jun; Li, Jun.
Afiliación
  • Wu Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Hu Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Wang C; Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China.
  • Zhou X; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
  • Hou X; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Xia W; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Zhang Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Wang J; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Ding Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • He J; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Dong P; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Bao S; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Wen J; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Guo Y; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Watanabe K; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Taniguchi T; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Ji W; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
  • Wang ZJ; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 200031, China.
  • Li J; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Adv Mater ; 35(36): e2302568, 2023 Sep.
Article en En | MEDLINE | ID: mdl-37285053
ABSTRACT
Fe3 GeTe2 have proven to be of greatly intrigue. However, the underlying mechanism behind the varying Curie temperature (Tc ) values remains a puzzle. This study explores the atomic structure of Fe3 GeTe2 crystals exhibiting Tc values of 160, 210, and 230 K. The elemental mapping reveals a Fe-intercalation on the interstitial sites within the van der Waals gap of the high-Tc (210 and 230 K) samples, which are observed to have an exchange bias effect by electrical transport measurements, while Fe intercalation or the bias effect is absent in the low-Tc (160 K) samples. First-principles calculations further suggest that the Fe-intercalation layer may be responsible for the local antiferromagnetic coupling that gives rise to the exchange bias effect, and that the interlayer exchange paths greatly contribute to the enhancement of Tc . This discovery of the Fe-intercalation layer elucidates the mechanism behind the hidden antiferromagnetic ordering that underlies the enhancement of Tc in Fe3 GeTe2 .
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: China
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: China