Impact of Charge-Trapping Effects on Reliability Instability in Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN High-Electron-Mobility Transistors with Various Al Compositions.

Amir, Walid; Chakraborty, Surajit; Kwon, Hyuk-Min; Kim, Tae-Woo

Impact of Charge-Trapping Effects on Reliability Instability in Al_xGa_1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions.

Amir, Walid; Chakraborty, Surajit; Kwon, Hyuk-Min; Kim, Tae-Woo.

Afiliación

Amir W; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
Chakraborty S; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
Kwon HM; Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus, Korea Polytechnics, Anseong-si 17550, Republic of Korea.
Kim TW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.

Materials (Basel) ; 16(12)2023 Jun 19.

Article en En | MEDLINE | ID: mdl-37374651

Palabras clave

1/f low-frequency noise; AlGaN/GaN HEMT; constant voltage stress (CVS); fast-transient charge-trapping; interfacial degradation; pulsed IV; threshold voltage degradation (∆VT); volume trap density (Nt)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2023 Tipo del documento: Article