Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS<sub>2</sub> Field-Effect Transistors.

Chin, Huei Chaeng; Hamzah, Afiq; Alias, Nurul Ezaila; Tan, Michael Loong Peng

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS₂ Field-Effect Transistors.

Chin, Huei Chaeng; Hamzah, Afiq; Alias, Nurul Ezaila; Tan, Michael Loong Peng.

Afiliación

Chin HC; Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia.
Hamzah A; Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia.
Alias NE; Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia.
Tan MLP; Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia.

Micromachines (Basel) ; 14(6)2023 Jun 12.

Article en En | MEDLINE | ID: mdl-37374820

Palabras clave

IV; MoS2 FET; acoustic; mean free path; optical; phonon; strain

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Malasia

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