A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap.

Liu, An-Chen; Lai, Yung-Yu; Chen, Hsin-Chu; Chiu, An-Ping; Kuo, Hao-Chung

Liu, An-Chen; Lai, Yung-Yu; Chen, Hsin-Chu; Chiu, An-Ping; Kuo, Hao-Chung.

Afiliación

Liu AC; Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Lai YY; Research Center for Applied Sciences, Academia Sinica, Taipei 114699, Taiwan.
Chen HC; Institute of Advanced Semiconductor Packaging and Testing, College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung 804201, Taiwan.
Chiu AP; Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
Kuo HC; Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

Micromachines (Basel) ; 14(4)2023 Mar 29.

Article en En | MEDLINE | ID: mdl-37420998

Palabras clave

GaN on Si/SiC/QST; gallium nitride; high electron mobility transistor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Taiwán

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