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Broadband La2LiSbO6: Cr3+ Phosphors with Double Luminescent Centers for NIR pc-LEDs.
Zhang, Yi; Gao, Zhexuan; Li, Yingguang; Chen, Shuyang; Han, Mingxiao; Li, Jie; Zhang, Qihao; Shen, Yang; Deng, Degang; Xu, Shiqing.
Afiliación
  • Zhang Y; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Gao Z; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Li Y; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Chen S; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Han M; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Li J; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Zhang Q; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Shen Y; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Deng D; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
  • Xu S; Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, P. R. China.
Inorg Chem ; 62(42): 17371-17381, 2023 Oct 23.
Article en En | MEDLINE | ID: mdl-37816214
The La2LiSbO6: xCr3+ phosphors were synthesized by means of a high-temperature solid-phase method. Based on the differences in ionic radius, valence state, and formation energy, the substitution sites of Cr3+ ions are discussed in detail. The optimized doping concentration of Cr3+ is determined to be 0.01. Under 517 nm excitation, the La2LiSbO6: 0.01Cr3+ phosphor presents a wide emission band (from 700 to 1350 nm) with a peak centered at 952 nm. Additionally, its corresponding full width at half-maximum is 155 nm, and the internal quantum efficiency reaches 62.4%. Meanwhile, the emission intensity of the La2LiSbO6: 0.01Cr3+ phosphor at 373 K is about 63.7% of that at room temperature, exhibiting good thermal stability. Aiming to fabricate a near-infrared phosphor-converted light-emitting diode device, the La2LiSbO6: 0.01Cr3+ phosphor is mixed with epoxy adhesive and cured on a green light-emitting diode chip. Under the irradiation of the fabricated light-emitting diode device, fruits and writing in the dark environment can be captured by a near-infrared camera. Hence, the La2LiSbO6: 0.01Cr3+ phosphor is promising for night vision.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Inorg Chem Año: 2023 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Inorg Chem Año: 2023 Tipo del documento: Article
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