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Torsional deformation modulation of the electronic structure and optical properties of molybdenum ditelluride systems doped with halogen atoms X (X = F, Cl, Br, I): a first-principles study.
Dai, Ying; Liu, Guili; He, Jianlin; Ni, Junjie; Zhang, Guoying.
Afiliación
  • Dai Y; College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, People's Republic of China.
  • Liu G; College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, People's Republic of China. garylll@sina.com.
  • He J; College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, People's Republic of China.
  • Ni J; College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, People's Republic of China.
  • Zhang G; School of Physics, Shenyang Normal University, Shenyang, People's Republic of China.
J Mol Model ; 29(11): 356, 2023 Nov 02.
Article en En | MEDLINE | ID: mdl-37917249
ABSTRACT
CONTEXT Using a first-principles plane-wave pseudopotential technique within the context of density-functional theory, the electronic structure and optical properties of the molybdenum ditelluride system doped with halogen atoms X (X = F, Cl, Br, I) were investigated. The electronic structure, density of states, charge transfer, and optical properties of halogen atom X doped on MoTe2 monolayer are systematically calculated and analyzed. It shows that the Fermi energy level is shifted upward after doping with halogen atoms. With F-MoTe2 doping, the geometrical distortion is the most pronounced, the charge transfer number is the highest, and the semiconductor shifts from a direct band gap to an indirect band gap. When the torsional deformation is between 1° and 5°, the F-doped MoTe2 system stays an indirect band gap semiconductor and transitions to quasi-metal at 6°. It is shown that the torsional deformation can modulate the electronic properties of the doped structure and realize the semiconductor-metal transition. OPTICAL PROPERTIES The F-doped system has a strong absorption peak reflection peak after torsion, and with the increase of torsion angle, the absorption peak is red-shifted, and the reflection peak is blue-shifted. Moreover, the absorption and reflection peaks start to decrease with the rise of the torsion angle.

METHODS:

We apply the generalized gradient approximation plane-wave pseudopotential technique based on Perdew-Burke-Ernzerhof (PBE) generalized functions, under the first principles of the density-functional theory framework. The overall optimization of the intrinsic molybdenum ditelluride structure and the halogen atom X-doped molybdenum ditelluride structure was carried out. Then, the F-doped molybdenum ditelluride system was selected for torsional deformation with torsion angles from 1° to 6° for computational analysis. SPECIFIC

METHOD:

To make the presentation more accessible, the atoms in the F-doped molybdenum ditelluride system were colored differently. The pink chain edge atoms were first reversed by θ°. Then, the blue chain edge atoms were reversed by θ° in the other direction. The middle row of atoms was adjusted accordingly to the different twisting angles of the two sides by doing the corresponding torsion with the torsion angle θ°/2 and fixing the individual atoms. The calculation employs the Monkhorst-Pack particular K-point sampling method. The 3 × 3 × 1 inverted-space K-point grid is utilized for material structure optimization calculations in each model, and the 9 × 9 × 1 K-point grid is used for material electronic structure calculations. A 15 Å vacuum layer is put on the crystal surface of vertical monolayer molybdenum ditelluride supercells to avoid interactions with adjoining cells.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Mol Model Asunto de la revista: BIOLOGIA MOLECULAR Año: 2023 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Mol Model Asunto de la revista: BIOLOGIA MOLECULAR Año: 2023 Tipo del documento: Article
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