Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes.

Yeon, Eungbeom; Woo, Seungwan; Chu, Rafael Jumar; Lee, In-Hwan; Jang, Ho Won; Jung, Daehwan; Choi, Won Jun

Yeon, Eungbeom; Woo, Seungwan; Chu, Rafael Jumar; Lee, In-Hwan; Jang, Ho Won; Jung, Daehwan; Choi, Won Jun.

Afiliación

Yeon E; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Woo S; Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea.
Chu RJ; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Lee IH; Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, South Korea.
Jang HW; Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea.
Jung D; Division of Nanoscience and Technology, University of Science and Technology, Seoul 02792, South Korea.
Choi WJ; Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea.

ACS Appl Mater Interfaces ; 15(48): 55965-55974, 2023 Dec 06.

Article en En | MEDLINE | ID: mdl-37978916

Palabras clave

defect filter layer; electron contrast channeling image; heteroepitaxial growth; light-emitting diode; molecular beam epitaxy; short-wavelength infrared

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: Corea del Sur

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