Boosting CuâInâZnâS-based Quantum-Dot Light-Emitting Diodes Enabled by Engineering CuâNiOx /PEDOT:PSS Bilayered Hole-Injection Layer.
Small
; : e2307115, 2023 Dec 07.
Article
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| MEDLINE
| ID: mdl-38059744
ABSTRACT
The imbalance of charge injection is considered to be a major factor that limits the device performance of cadmium-free quantum-dot light-emitting diodes (QLEDs). In this work, high-performance cadmium-free CuâInâZnâS(CIZS)-based QLEDs are designed and fabricated through tailoring interfacial energy level alignment and improving the balance of charge injection. This is achieved by introducing a bilayered hole-injection layer (HIL) of Cu-doped NiOx (CuâNiOx )/Poly(3,4-ethylenedioxythiophene) poly (styrene sulfonate) (PEDOTPSS). High-quality CuâNiOx film is prepared through a novel and straightforward sol-gel procedure. Multiple experimental characterizations and theoretical calculations show that the incorporation of Cu2+ ions can regulate the energy level structure of NiOx and enhance the hole mobility. The state-of-art CIZS-based QLEDs with CuâNiOx /PEDOTPSS bilayered HIL exhibit the maximum external quantum efficiency of 6.04% and half-life time of 48 min, which is 1.3 times and four times of the device with only PEDOTPSS HIL. The work provides a new pathway for developing high-performance cadmium-free QLEDs.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Small
Asunto de la revista:
ENGENHARIA BIOMEDICA
Año:
2023
Tipo del documento:
Article
País de afiliación:
China