Characteristics of tunable aluminum-doped Ga<sub>2</sub>O<sub>3</sub>thin films and photodetectors.

Ding, Si-Tong; Chen, Yu-Chang; Yu, Qiu-Jun; Zeng, Guang; Shi, Cai-Yu; Shen, Lei; Zhao, Xue-Feng; Lu, Hong-Liang

Characteristics of tunable aluminum-doped Ga₂O₃thin films and photodetectors.

Ding, Si-Tong; Chen, Yu-Chang; Yu, Qiu-Jun; Zeng, Guang; Shi, Cai-Yu; Shen, Lei; Zhao, Xue-Feng; Lu, Hong-Liang.

Afiliación

Ding ST; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Chen YC; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Yu QJ; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Zeng G; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Shi CY; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Shen L; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Zhao XF; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
Lu HL; State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.

Nanotechnology ; 35(15)2024 Jan 24.

Article en En | MEDLINE | ID: mdl-38176077

ABSTRACT

ABSTRACT

Aluminum-doped Ga2O3(AGO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD). The growth mechanism, surface morphology, chemical composition, and optical properties of AGO films were systematically investigated. The bandgap of AGO films can be theoretically set between 4.65 and 6.8 eV. Based on typical AGO films, metal-semiconductor-metal photodetectors (PDs) were created, and their photoelectric response was examined. The preliminary results show that PE-ALD grown AGO films have high quality and tunable bandgap, and AGO PDs possess superior characterizations to undoped films. The AGO realized using PE-ALD is expected to be an important route for the development of a new generation of gallium oxide-based photodetectors into the deep-ultraviolet.

Palabras clave

aluminum-doped Ga2O3; growth mechanism; photodetector; plasma-enhanced atomic layer deposition; tunable bandgap

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2024 Tipo del documento: Article