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Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance.
Guo, Jing; Chen, Ping-An; Yang, Shuzhang; Wei, Huan; Liu, Yu; Xia, Jiangnan; Chen, Chen; Chen, Huajie; Wang, Suhao; Li, Wenwu; Hu, Yuanyuan.
Afiliación
  • Guo J; Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
  • Chen PA; School of Physics and Information Engineering, Shanxi Normal University, Taiyuan, 031000, China.
  • Yang S; Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
  • Wei H; Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China.
  • Liu Y; International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
  • Xia J; Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China.
  • Chen C; Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China.
  • Chen H; International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
  • Wang S; Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China.
  • Li W; International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
  • Hu Y; Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China.
Small Methods ; : e2400084, 2024 May 13.
Article en En | MEDLINE | ID: mdl-38738733
ABSTRACT
Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm-1, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Methods Año: 2024 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Methods Año: 2024 Tipo del documento: Article País de afiliación: China
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