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Evidence of abnormal hot carrier thermalization at van Hove singularity of twisted bilayer graphene.
Shang, Nianze; Huang, Chen; Chen, Qing; Liu, Chang; Yao, Guangjie; Sun, Zhipei; Meng, Sheng; Liu, Kaihui; Hong, Hao.
Afiliación
  • Shang N; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China; QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland.
  • Huang C; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
  • Chen Q; Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Liu C; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
  • Yao G; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
  • Sun Z; QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland.
  • Meng S; Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. Electronic address: smeng@iphy.ac.cn.
  • Liu K; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China; Songshan Lake Materials Lab, Institute of Physics, Chinese Academy of Sciences, Dongguan 523808, China. Electronic address: khliu@pku.edu.cn.
  • Hong H; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Bei
Sci Bull (Beijing) ; 69(16): 2522-2528, 2024 Aug 30.
Article en En | MEDLINE | ID: mdl-38945751
ABSTRACT
Interlayer twist evokes revolutionary changes to the optical and electronic properties of twisted bilayer graphene (TBG) for electronics, photonics and optoelectronics. Although the ground state responses in TBG have been vastly and clearly studied, the dynamic process of its photoexcited carrier states mainly remains elusive. Here, we unveil the photoexcited hot carrier dynamics in TBG by time-resolved ultrafast photoluminescence (PL) autocorrelation spectroscopy. We demonstrate the unconventional ultrafast PL emission between the van Hove singularities (VHSs) with a ∼4 times prolonged relaxation lifetime. This intriguing photoexcited carrier behavior is ascribed to the abnormal hot carrier thermalization brought by bottleneck effects at VHSs and interlayer charge distribution process. Our study on hot carrier dynamics in TBG offers new insights into the excited states and correlated physics of graphene twistronics systems.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Año: 2024 Tipo del documento: Article País de afiliación: Finlandia

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Año: 2024 Tipo del documento: Article País de afiliación: Finlandia
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