In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells.
ACS Appl Mater Interfaces
; 16(30): 39399-39407, 2024 Jul 31.
Article
en En
| MEDLINE
| ID: mdl-39031069
ABSTRACT
High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOTPSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (WF) of PEDOTPSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA0.6MA0.4Pb0.4Sn0.6I3)/HTL bottom interface. The WF of PEDOTPSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive VOC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA0.6MA0.4Pb0.4Sn0.6I3 PSCs with 18.3% efficiency and an exceptionally high VOC of 0.845 V.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2024
Tipo del documento:
Article
País de afiliación:
Suiza