Manipulation of Exchange Bias in Two-Dimensional van der Waals Ferromagnet Near Room Temperature.

Liu, Daxiang; Pei, Fangfang; Wang, Siyu; Chen, Xiaoli; Yuan, Yanan; Zhao, Jiapeng; Guo, Junming; Wang, Tianye; Li, Lin; Kan, Xucai; Liao, Zhaoliang; Song, Dongsheng; Liu, Xue; Fang, Yong; Wang, Shouguo; Zhou, Shiming; Qiu, Zi Qiang; Huang, He; Yang, Mengmeng; Li, Qian

Liu, Daxiang; Pei, Fangfang; Wang, Siyu; Chen, Xiaoli; Yuan, Yanan; Zhao, Jiapeng; Guo, Junming; Wang, Tianye; Li, Lin; Kan, Xucai; Liao, Zhaoliang; Song, Dongsheng; Liu, Xue; Fang, Yong; Wang, Shouguo; Zhou, Shiming; Qiu, Zi Qiang; Huang, He; Yang, Mengmeng; Li, Qian.

Afiliación

Liu D; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.
Pei F; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.
Wang S; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.
Chen X; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.
Yuan Y; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.
Zhao J; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Guo J; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Wang T; Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States.
Li L; Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
Kan X; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
Liao Z; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.
Song D; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Liu X; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Fang Y; Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
Wang S; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
Zhou S; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
Qiu ZQ; Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States.
Huang H; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Yang M; Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Li Q; National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China.

ACS Nano ; 18(34): 23812-23822, 2024 Aug 27.

Article en En | MEDLINE | ID: mdl-39146501

ABSTRACT

ABSTRACT

As a host for exchange bias (EB), van der Waals (vdW) magnetic materials have exhibited intriguing and distinct functionalities from conventional magnetic materials. The EB in most vdW systems is far below room temperature, which poses a challenge for practical applications. Here, by using Kerr microscopy, we demonstrate a record-high blocking temperature that approaches room temperature and a huge positive EB field that nears 2 kOe at 100 K in naturally oxidized two-dimensional (2D) vdW ferromagnetic Fe3GaTe2 nanoflakes. Moreover, we realized a reversible manipulation of both the presence/absence and positive/negative signs of EB via a training magnetic field without multiple field cooling processes. Thus, our study clearly reveals the robust, sizable, and sign-tunable EB in vdW magnetic materials up to near room temperature, thereby establishing Fe3GaTe2 as an emerging room-temperature-operating vdW material and paving the way for designing practical 2D spintronic devices.

Palabras clave

Kerr microscopy; X-ray magnetic circular dichroism; ferromagnet/antiferromagnet interfacial exchange interaction; flipping of pinned uncompensated AFM spins; oxygen intercalation; room-temperature exchange bias; van der Waals ferromagnet

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article País de afiliación: China