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High-speed wavelength-swept semiconductor laser with a polygon-scanner-based wavelength filter.
Yun, S H; Boudoux, C; Tearney, G J; Bouma, B E.
Afiliação
  • Yun SH; Harvard Medical School and Wellman Laboratories for Photomedicine, Massachusetts General Hospital, 50 Blossom Street, BAR 718, Boston, Massachusetts 02114, USA. syun@bics.bwh.harvard.edu
Opt Lett ; 28(20): 1981-3, 2003 Oct 15.
Article em En | MEDLINE | ID: mdl-14587796
ABSTRACT
Ultrahigh-speed tuning of an extended-cavity semiconductor laser is demonstrated. The laser resonator comprises a unidirectional fiber-optic ring, a semiconductor optical amplifier as the gain medium, and a novel scanning filter based on a polygonal scanner. Variable tuning rates up to 1150 nm/ms (15.7-kHz repetition frequency) are demonstrated over a 70-nm wavelength span centered at 1.32 microm. This tuning rate is more than an order of magnitude faster than previously demonstrated and is facilitated in part by self-frequency shifting in the semiconductor optical amplifier. The instantaneous linewidth of the source is <0.1 nm for 9-mW cw output power and a low spontaneous-emission background of -80 dB.
Assuntos
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Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Semicondutores / Lasers Tipo de estudo: Prognostic_studies Idioma: En Revista: Opt Lett Ano de publicação: 2003 Tipo de documento: Article País de afiliação: Estados Unidos
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Semicondutores / Lasers Tipo de estudo: Prognostic_studies Idioma: En Revista: Opt Lett Ano de publicação: 2003 Tipo de documento: Article País de afiliação: Estados Unidos
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