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Insulating ground state of Sn/Si(111)-(square root 3 x square root 3)R30 degrees.
Modesti, S; Petaccia, L; Ceballos, G; Vobornik, I; Panaccione, G; Rossi, G; Ottaviano, L; Larciprete, R; Lizzit, S; Goldoni, A.
Afiliação
  • Modesti S; Laboratorio Nazionale TASC-INFM, S.S. 14 Km 163.5, 34012 Trieste, Italy.
Phys Rev Lett ; 98(12): 126401, 2007 Mar 23.
Article em En | MEDLINE | ID: mdl-17501138
ABSTRACT
The Sn/Si(111)-(square root 3 x square root 3)R30 degrees surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2007 Tipo de documento: Article País de afiliação: Itália
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2007 Tipo de documento: Article País de afiliação: Itália
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